Detecting hydrogen using graphene quantum dots/WO3 thin films

In the present work we report an approach to resistive hydrogen sensing based on graphene quantum dots (GQDs)/WO3 thin films that work reproducibly at low temperatures. GQDs were chemically synthesized and evenly dispersed in WO3 solution with 1: 1 molar ratio. The structural evaluation and crystallization of the prepared films was studied by x-ray diffraction, Raman and scanning electron microscopy (SEM) techniques. The SEM images showed uniform distribution of the GQDs in WO3 films with sizes around 50 nm. Raman experiment showed the GQDs are partially reduced with high edge defects as hydroxyl and carboxyl groups which involve both in bridging between WO3 grains via bindings as well as interacting with target gas molecules. GQDs can develop an electron conductive network and shorten the current transport paths inside the sensitive films. As a result, they improved the poor electrical properties and charge transfer of pure WO3. Resistive hydrogen sensing showed significant decrease in the working temperature for GQDs/WO3 films compared to pure WO3 films. The working temperature of about 150 degrees C with 15 and 40 s response and recovery times are significant characteristics of the introduced sensing structure. Then palladium (Pd) was added as a catalyst in GQDs/WO3 film to make the sensing materials selective to hydrogen. Pd doped film worked at temperature of 120 degrees C with high selectivity and improved response magnitude to hydrogen gas.