期刊
RSC ADVANCES
卷 12, 期 31, 页码 19936-19945出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/d2ra02875a
关键词
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资金
- National Key Research and Development Program of China [2021YFB3401602]
- Major Scienti.c and Technological Achievements Transformation Projects of Heilongjiang Province of China [CG20A008]
- Natural Science Foundation of Heilongjiang Province [JQ2019E003]
By modeling and optimizing the physical fields in the SiC crystal growth process with the numerical simulation software Virtual Reactor, high-quality and large-sized SiC crystals were successfully prepared. This is of great importance for the application of SiC in the new energy industry.
The excellent physical properties of SiC as an electronic material determine its important application prospects, especially in the new-energy industry, but the preparation of large-sized materials with high quality is not easy. Therefore, the physical fields in the growth process were modeled and studied with the help of the numerical simulation software Virtual Reactor, and its accuracy was verified by the agreement between morphology of the experimental crystal and the simulation. Additionally, the effects of thermal insulation adjustment of crystal growth thermal fields, application of seed crystals with different diameters, and shelter structure on the crystal growth process were also studied. By optimizing the crystal growth conditions, a nearly flat and slightly convex crystal growth interface was obtained successfully in our lab. Crystal quality was significantly improved, and a 6-inch SiC crystal with single polytype, high quality and low defects was successfully prepared.
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