期刊
LASER & OPTOELECTRONICS PROGRESS
卷 59, 期 9, 页码 -出版社
SHANGHAI INST OPTICS & FINE MECHANICS, CHINESE ACAD SCIENCE
DOI: 10.3788/LOP202259.0922029
关键词
lithography; super-diffraction; laser direct writing; projection lithography; nonlinear optics; lithographic resolution; lithography efficiency
This article introduces the complexity and cost of current photolithography technology used in the semiconductor industry, and proposes the need for lithography methods that break the diffraction limit. It discusses the principles and methods of super-diffraction lithography technology, reviews the progress and current status of laser super-diffraction lithography, and discusses the existing problems and prospects for future development.
The technology and instrument of current photolithography applied in semiconductor industry have been very complex and expensive due to the diffraction limit barrier of linear optics. For achieving nanoscale lithography with visible and near-infrared light, the lithography method is necessary to breaking the diffraction limit. In this article, we introduce the principles and methods of super- diffraction lithography technology, review the progress and current status of laser super-diffraction lithography with problem discussion and prospect of development.
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