Structure, electrical properties, and conduction mechanism of new germanate mixed Zn-doped In2Ge2O7 conductors

Mixed electronic and oxide ionic conduction was introduced in InGe2O7 containing isolated Ge2O7 units through the substitution of Zn2+ for In3+. The solid solution limit of Zn doping in In2-xZnxGe2O7-0.5x is 0-0.2, as confirmed by Rietveld refinements and systematic experiments. The bulk conductivities of the obtained In1-xZnxGe2O7-0.5x (x = 0.2) can reach 1.62 x 10(-2) S cm(-1) at 1000 degrees C with oxygen transport number of similar to 20%. Moreover, variable temperature XRD patterns of In1-xZnxGe2O7-0.5x (x = 0.2) show the superior phase stability in the temperature region of 25-1000 degrees C with potential applications in electrode materials for SOFCs. Oxide ion conduction is ascribed to the preferred oxygen vacancies of the O1 site introduced by the substitution of Zn2+ for In3+, and the BVEL calculations indicate that the migration of oxygen vacancies is achieved by oxygen exchange between adjacent Ge2O7 units and exhibits two-dimensional anisotropic transport in monoclinic In2Ge2O7.

Automated summary

Mixed electronic and oxide ionic conduction was introduced in InGe2O7 through Zn2+ substitution for In3+. The obtained In1-xZnxGe2O7-0.5x exhibited high bulk conductivity at 1000 degrees C and showed potential applications in electrode materials for SOFCs.