4.8 Article

Monolayer GaOCl: a novel wide-bandgap 2D material with hole-doping-induced ferromagnetism and multidirectional piezoelectricity

期刊

NANOSCALE
卷 14, 期 31, 页码 11369-11377

出版社

ROYAL SOC CHEMISTRY
DOI: 10.1039/d2nr02821b

关键词

-

资金

  1. Research Grants Council of the Hong Kong Special Administrative Region, China [15219018/18E]

向作者/读者索取更多资源

In this study, a novel GaOCl monolayer with excellent stability and wide bandgap is proposed and studied. The material exhibits high mechanical flexibility, anisotropic Poisson's ratio and carrier mobilities, making it suitable for various electronic and optoelectronic applications. Additionally, the GaOCl monolayer shows spontaneous magnetization and outstanding multidirectional piezoelectricity. These characteristics make it a promising candidate for high-performance multifunctional integrated nano-devices.
Two-dimensional (2D) materials with excellent properties are emerging as promising candidates in electronics and spintronics. In this work, a novel GaOCl monolayer is proposed and studied systematically based on first-principles calculations. With excellent thermal and dynamic stability at room temperature, its wide direct bandgap (4.46 eV) can be further modulated under applied strains. The 2D semiconductor exhibits high mechanical flexibility, and anisotropy in Poisson's ratio and carrier mobilities, endowing it with a broad spectrum of electronic and optoelectronic applications. More importantly, the GaOCl monolayer has spontaneous magnetization induced by hole doping and shows outstanding multidirectional piezoelectricity, which are comparable with those of either magnetic or piezoelectric 2D materials. Our calculations indicate that the GaOCl monolayer with wide bandgaps and tunable piezoelectricity and ferromagnetism could be promising for applications in multifunctional integrated nano-devices with high performance.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.8
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据