3.8 Proceedings Paper

63 fJ/bit heterogeneous III-V on Si modulator for the C band

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IEEE

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  1. Army Research Office (ARO) [W911NF19-C-0060]

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This article presents a heterogeneous III-V on Si electro-optic Mach-Zehnder modulator with a p-i-n junction, achieving a V-pi . L of 3.4 V.mm, an eye diagram opening up to 12 Gb/s, and a small average energy per bit of 63 fJ/bit at 12 Gb/s.
Heterogeneous III-V on Si electro-optic Mach-Zehnder modulator with a p-i-n junction demonstrates V-pi . L of 3.4 V.mm, eye diagram opening up to 12 Gb/s, and small average energy per bit of 63 fJ/bit at 12 Gb/s. (C) 2022 The Author(s)

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