Degradation mechanisms and lifetime assessment of Ge Vertical PIN photodetectors

Dark current degradation mechanisms in Ge VPIN photodetectors were studied. A methodology to estimate the failure percentages has been developed and applied. Degradation/recovery processes and E-a-decrease of I-dark after stress suggest increased TAT during degradation.

Automated summary

The degradation mechanisms of dark current in Ge VPIN photodetectors were investigated, and a methodology for estimating failure percentages was developed and applied. The degradation/recovery processes and the decrease of E-a in I-dark after stress suggest an increased trap-assisted tunneling during degradation.