4.2 Article

Individual qubit addressing of rotating ion crystals in a Penning trap

期刊

PHYSICAL REVIEW RESEARCH
卷 4, 期 3, 页码 -

出版社

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevResearch.4.033076

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资金

  1. U.S. Department of Energy, Office of Science, National Quantum Information Science Research Centers, Quantum Systems Accelerator (QSA)
  2. NSF [1734006, PHY 1820885]
  3. NASA Space Technology Graduate Research Opportunity
  4. DARPA ONISQ program
  5. AFOSR [FA9550-20-1-0019]

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Trapped ions offer a useful platform for quantum information processing due to their long coherence times and high gate fidelities. However, the rotation of ion crystals poses a challenge for single ion addressability. In this study, we propose a protocol that utilizes a deformable mirror to introduce AC Stark shift patterns, enabling high-fidelity single-ion gates in rotating ion crystals.
Trapped ions boast long coherence times and excellent gate fidelities, making them a useful platform for quantum information processing. Penning traps offer the possibility of trapping large two-dimensional crystals of several hundred ions. The ions are confined by controlling the rotation of the ion crystal in the presence of a strong magnetic field. However, the rotation of the ion crystal makes single ion addressability a significant challenge. We propose a protocol that takes advantage of a deformable mirror to introduce AC Stark shift patterns that are static in the rotating frame of the crystal. Through numerical simulations we validate the potential of this protocol to perform high-fidelity single-ion gates in crystalline arrays of hundreds of ions.

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