期刊
ENERGIES
卷 15, 期 14, 页码 -出版社
MDPI
DOI: 10.3390/en15145244
关键词
comparative analysis; GaN; power MOSFET; power electronics; SiC
资金
- CNPq [140848/2020-7]
- CAPES [88887.597766/2021-00, 001]
This study presents a comparative analysis of four power MOSFET technologies and identifies the optimal performance in terms of voltage, current, and frequency ranges for each technology. A database of power MOSFETs from various manufacturers was created. The study also introduces a methodology for selecting power MOSFETs in power electronics applications.
This work presents a comparative analysis among four power MOSFET technologies: conventional Silicon (Si), Superjunction (SJ), Silicon Carbide (SiC) and Gallium Nitride (GaN), indicating the voltage, current and frequency ranges of the best performance for each technology. For this, a database with 91 power MOSFETs from different manufacturers was built. MOSFET losses are related to individual characteristics of the technology: drain-source on-state resistance, input capacitance, Miller capacitance and internal gate resistance. The total losses are evaluated considering a drain-source voltage of 400 V, power levels from 1 kW to 16 kW (1 A-40 A) and frequencies from 1 kHz to 500 kHz. A methodology for selecting power MOSFETs in power electronics applications is also presented.
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