Single and double In atomic layers grown on top of a single atomic NiSi2 layer on Si(111)

Atomic sandwiches consisting of In layers with coverages ranging from similar to 0.5 to similar to 2.5 monolayers atop a single-atomic-layer NiSi2 have been grown on Si(111) and have been explored using a set of experimental techniques, i.e., scanning tunneling microscopy, angle-resolved photoelectron spectroscopy, and in situ low-temperature transport measurements, accompanied by the density functional theory calculations. It has been found that each of the three In phases forming on the NiSi2/Si(111) substrate has its definite counterpart among the In phases forming on the bare Si(111) surface. Structural, electronic, and transport properties of the single-and double-atomic In layers have been elucidated in detail.

Automated summary

Atomic sandwiches consisting of In layers with different thicknesses have been grown on Si(111) and their properties have been studied using experimental techniques and theoretical calculations. The results show that the In phases formed on the NiSi2/Si(111) substrate have counterparts on the bare Si(111) surface. The structural, electronic, and transport properties of the In layers have been elucidated in detail.