期刊
IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS
卷 4, 期 3, 页码 738-746出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JESTPE.2016.2587479
关键词
DC-DC power converters; electronic packaging thermal management; wide band gap semiconductors
With power converters demanding higher power density, transistors must be accommodated in an ever-decreasing board space. Beyond gallium nitride (GaN)-based power transistors' ability to improve electrical efficiency, they must also be more thermally efficient. In this paper, we will evaluate the thermal performance of chip-scale packaged enhancement-mode GaN field-effect transistors and compare their in-circuit electrical and thermal performances with state-of-art silicon MOSFETs. This paper will conclude with the proposal of a thermal figure of merit for designers to use as a tool to quickly compare the thermal efficiency of device packaging technologies.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据