4.4 Article

BEOL Process Effects on ePCM Reliability

相关参考文献

注意:仅列出部分参考文献,下载原文获取全部文献信息。
Proceedings Paper Engineering, Electrical & Electronic

Improving Ge-rich GST ePCM reliability hrough BEOL engineering

A. Redaelli et al.

Summary: This paper discusses the impact of back-end of line (BEOL) process on the performance of Phase-Change Memory embedded in a 28nm FD-SOI platform. By optimizing the BEOL process, a memory cell fully compatible with demanding automotive applications has been achieved.

IEEE 51ST EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC 2021) (2021)

Proceedings Paper Engineering, Electrical & Electronic

High Density Embedded PCM Cell in 28nm FDSOI Technology for Automotive Micro-Controller Applications

F. Arnaud et al.

2020 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) (2020)

Proceedings Paper Engineering, Electrical & Electronic

Modeling of virgin state and forming operation in embedded phase change memory (PCM)

M. Baldo et al.

2020 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) (2020)

Article Engineering, Electrical & Electronic

Crystallization Speed in Ge-Rich PCM Cells as a Function of Process and Programming Conditions

E. Gomiero et al.

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY (2019)

Article Materials Science, Multidisciplinary

Chemical phase segregation during the crystallization of Ge-rich GeSbTe alloys

Marta Agati et al.

JOURNAL OF MATERIALS CHEMISTRY C (2019)

Review Materials Science, Multidisciplinary

Automated crystal orientation and phase mapping in TEM

E. F. Rauch et al.

MATERIALS CHARACTERIZATION (2014)