Interplay Between Charge Trapping and Polarization Switching in BEOL-Compatible Bilayer Ferroelectric Tunnel Junctions

We here report a joint experimental and theoretical analysis of polarization switching in ferroelectric tunnel junctions. Our results show that the injection and trapping of charge into the ferroelectric-dielectric stack has a large influence on the polarization switching. Our results are relevant to the physical understanding and to the design of the devices, and for both memory and memristor applications.

Automated summary

We present a combined experimental and theoretical analysis of polarization switching in ferroelectric tunnel junctions. The injection and trapping of charge into the ferroelectric-dielectric stack are found to have a significant impact on the polarization switching. Our findings are important for understanding the physical processes and designing devices for memory and memristor applications.