4.7 Article

Direct growth of monolayer MoS2 on nanostructured silicon waveguides

期刊

NANOPHOTONICS
卷 11, 期 19, 页码 4397-4408

出版社

WALTER DE GRUYTER GMBH
DOI: 10.1515/nanoph-2022-0235

关键词

2D materials; excitonic photoluminescence; integrated photonics; transition metal dichalcogenides

资金

  1. Federal Ministry of Education and Science of Germany [13XP5053A]
  2. European Social Funds [2019FGR0101]
  3. Federal state of Thuringia [2018FGR00088]
  4. Deutsche Forschungsgemeinschaft (DFG) [398816777]
  5. Fraunhofer Society (FhG) [Attract066-601020]
  6. Australian Research Council [DE200101041]
  7. Australian Research Council [DE200101041] Funding Source: Australian Research Council

向作者/读者索取更多资源

This study reports the direct growth of molybdenum disulfide (MoS2) monolayers on nanostructured silicon-on-insulator waveguides. The direct growth approach rectifies the drawbacks of transfer-based methods and provides a novel way to functionalize nanostructured integrated optical architectures.
We report for the first time the direct growth of molybdenum disulfide (MoS2) monolayers on nanostructured silicon-on-insulator waveguides. Our results indicate the possibility of utilizing the Chemical Vapour Deposition (CVD) on nanostructured photonic devices in a scalable process. Direct growth of 2D material on nanostructures rectifies many drawbacks of the transfer-based approaches. We show that the van der Waals material grow conformally across the curves, edges, and the silicon-SiO2 interface of the waveguide structure. Here, the waveguide structure used as a growth substrate is complex not just in terms of its geometry but also due to the two materials (Si and SiO2) involved. A transfer-free method like this yields a novel approach for functionalizing nanostructured, integrated optical architectures with an optically active direct semiconductor.

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