Ensemble GaAsSb/GaAs axial configured nanowire-based separate absorption, charge, and multiplication avalanche near-infrared photodetectors

In this study, molecular beam epitaxially grown axially configured ensemble GaAsSb/GaAs separate absorption, charge, and multiplication (SACM) region-based nanowire avalanche photodetector device on non-patterned Si substrate is presented. Our device exhibits a low breakdown voltage (V-BR) of similar to -10 +/- 2.5 V under dark, photocurrent gain (M) varying from 20 in linear mode to avalanche gain of 700 at V-BR at a 1.064 mu m wavelength. Positive temperature dependence of breakdown voltage similar to 12.6 mV K-1 further affirms avalanche breakdown as the gain mechanism in our SACM NW APDs. Capacitance-voltage (C-V) and temperature-dependent noise characteristics also validated punch-through voltage ascertained from I-V measurements, and avalanche being the dominant gain mechanism in the APDs. The ensemble SACM NW APD device demonstrated a broad spectral room temperature response with a cut-off wavelength of similar to 1.2 mu m with a responsivity of similar to 0.17-0.38 A W-1 at -3 V. This work offers a potential pathway toward realizing tunable nanowire-based avalanche photodetectors compatible with traditional Si technology.

Automated summary

This study presents a molecular beam epitaxially grown axially configured ensemble GaAsSb/GaAs nanowire avalanche photodetector device on non-patterned Si substrate. The device exhibits low breakdown voltage and high gain, and demonstrates a broad spectral response at room temperature. This work offers a potential pathway toward realizing tunable nanowire-based avalanche photodetectors compatible with traditional Si technology.