4.1 Article

Electronically Tunable Flux-Controlled Resistorless Memristor Emulator

出版社

IEEE CANADA
DOI: 10.1109/ICJECE.2022.3182711

关键词

Current mode; incremental/decremental mode; memristor emulator (MRE); Monte-Carlo sampling (MCS); pinched hysteresis (P-H) loop

资金

  1. Shastri Institutional Collaborative Research Grant (SICRG) [MHRD (SICRG)/2020-2021/740/ECE]

向作者/读者索取更多资源

This article presents a resistorless flux-controlled memristor emulator circuit with tunability based on VDIBA. The design eliminates multipliers and resistors by effectively utilizing port relationships. It accurately emulates the attributes of an ideal memristor and has been validated through experiments.
This article demonstrates a voltage differencing inverting buffered amplifier (VDIBA)-based resistorless flux-controlled memristor emulator circuit with tunability. Two VDIBA blocks serve as active components, and a grounded capacitor serving as a passive part. The proposed emulator design is devoid of multipliers and resistors through effective utilization of port relationships. Including tunability, the suggested emulator functions in both incremental and decremental modes. It accurately depicts the attributes of an ideal memristor up to 12.7 MHz and consumes a total power of 1.34 mW. The mathematical analysis is substantiated through Cadence simulation in 0.18-mu m Taiwan Semiconductor Manufacturing Company (TSMC) technology with the supply voltage of +/- 1 V. Nonideal, single/parallel, Monte-Carlo sampling and corner analysis were conducted to confirm circuit resilience. The nonvolatile nature of the presented emulator model has also been included. A breadboard prototype incorporating the ICs CA3080 and LT1193 are built to conduct an experimental demonstration. The experimental findings were consistent with the theoretical expectations and simulation results.

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