期刊
ADVANCED ELECTRONIC MATERIALS
卷 2, 期 4, 页码 -出版社
WILEY
DOI: 10.1002/aelm.201500405
关键词
Ohmic contact; 2D materials; van der Waals bonding; semiconductors
资金
- Physical Sciences Division (EW) of NWO
High contact resistances have blocked the progress of devices based on MX2 (M = Mo, W; X = S, Se, Te) 2D semiconductors. Interface states formed at MX2/metal contacts pin the Fermi level, leading to sizable Schottky barriers for p-type contacts in particular. It is shown that i) one can remove the interface states by covering the metal by a 2D layer, which is van der Waals-bonded to the MX2 layer, and ii) one can choose the buffer layer such that it yields a p-type contact with a zero Schottky barrier height. Possible buffer layers are graphene, a monolayer of h-BN, or an oxide layer with a high electron affinity, such as MoO3. The most elegant solution is a metallic M X-2 layer with a high work function. A NbS2 monolayer adsorbed on a metal yields a high work function contact, irrespective of the metal, which gives a barrierless contact to all MX2 layers.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据