TCAD Simulation of InP DHBTs With an In53.2Ga46.8As Base and InGaAsP Collector Grading

This work focuses on causes and improvements of non-linear behavior of InP DHBTs from a physical simulation point of view. The simulated devices are based on triple mesa structures with type-I band alignment employing a carbon doped In53.2Ga46.8As base, 0.5 mu m emitter width and InGaAsP material in the collector region to improve the electron transport. Simulated OIP3 values differed by about 5 dB between two devices. RF performance, in terms of transit frequency and maximum frequency of oscillation, differed by about 75 GHz and 87 GHz for the same device designs. The improved design also showed better electron transport across the collector region, underlining the high sensitivity of device performance effected by the collector design.

Automated summary

This study focuses on the causes and improvements of the non-linear behavior of InP DHBTs through physical simulations. The simulated devices have triple mesa structures with type-I band alignment and utilize a carbon-doped In53.2Ga46.8As base, 0.5 μm emitter width, and InGaAsP material in the collector region for enhanced electron transport. The simulations showed a 5 dB difference in OIP3 values between two devices, and a significant discrepancy in RF performance in terms of transit frequency and maximum frequency of oscillation. The improved design also demonstrated better electron transport across the collector region, highlighting the collector design's high sensitivity to device performance.