期刊
出版社
IEEE
DOI: 10.1109/IWMTS54901.2022.9832457
关键词
THz oscillator; quasi-optical measurement setup; transfer substrate; sub-micron bonding
类别
-
资金
- DFG [SFB/TRR 196]
- EU
- State of North-Rhine Westphalia within the EFRE 2014-2020 framework Investment in Growth and Employment under the project Terahertz-Integrationszentrum (THzIZ) [EFRE-0400215]
- BMBF ForLab SmartBeam within the German federal government program Research and Innovation 2016-20 [Fkz. 16ES0936]
This paper presents an assembly process using HRFZ-Si transfer substrate for precise alignment of THz oscillators with hyper-hemispherical silicon lenses. The bonding process and THz-TDS measurements were conducted to analyze the losses within the setup, and the process was verified with experiments on a 300 GHz triple barrier (TB)-RTD oscillator.
THz oscillators with on-chip antennas containing no ground plane are affected by substrate modes and therefore undirected radiation into free space. When integrating such antennas with focusing lenses, accurate sub-mu m alignment is required. This work presents an assembly process utilizing an HRFZ-Si transfer substrate between the InP RTD chip and a hyper-hemispherical silicon lens, enabling precise alignment. We developed a bonding process for 1.2 x 1.2 mm(2) InP RTD chips with an optical adhesive utilizing an advanced sub-micron bonder. THz-TDS measurements of the HRFZ silicon wafer were carried out to analyze the losses within the created setup by EM simulations. The assembly process was verified with measurements of a 300 GHz triple barrier (TB)-RTD oscillator using an SBD detector.
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