High-performance DUV-C Solar-Blind n-ZnO Quantum Dot/p-CuO Micro-pyramid Photodetector Arrays

The photodetector is fabricated simply by spray-coating ZnO QDs on a CuO micro-pyramid array. The p-n junction structure enhances the performance of the DUV n-ZnO/p-CuO/p-Si micro-pyramid device. The photodetector is characterized by high photo-responsivity at 244 nm (UV-C) with fast photoresponse and a cut-off at 280 nm. High self-powered photoresponse is confirmed. These high-performance solar-bind DUV photodetector arrays can be scaled up for mass production of a wide range of applications.

Automated summary

In this study, a photodetector was fabricated by spray-coating zinc oxide quantum dots on a copper oxide micro-pyramid array. The p-n junction structure enhanced the performance of the device, resulting in high photo-responsivity and self-powered photoresponse. These high-performance solar-bind DUV photodetector arrays have the potential for mass production and wide applications.