Electric field-induced switching of anomalous Nernst conductivity in the 2D MoTe2/VSe2 heterostructure

Generation of a transverse electric current by a longitudinal charge or heat current is receiving extensive research efforts because of its potential applications in information-processing devices. Therefore, we investigated the electric field-dependent Curie temperature, anomalous Hall conductivity (AHC), and anomalous Nernst conductivity (ANC) of the 2H-MoTe2/1T-VSe2 heterostructure. The MoTe2/VSe2 heterostructure had a Curie temperature of 270 K and the Curie temperature was substantially increased to 355 K under an electric field. We obtained the electric field-induced switching of the AHC in the electron-doped system, whereas no switching was found in the hole-doped system. Also, the electric field-dependent ANC of the MoTe2/VSe2 heterostructure was investigated. The electric field-dependence of the ANC was more prominent in the electron-doped system. We obtained a large ANC of 2.3 A K-1 m(-1) when the electric field was applied from VSe2 to MoTe2 layers and this was switched to -0.6 A K-1 m(-1) with an opposite electric field. This finding may indicate that the 2D MoTe2/VSe2 heterostructure can be used for potential applications in energy conversion and spintronic devices.

Automated summary

The electric field-dependent properties of the 2H-MoTe2/1T-VSe2 heterostructure were investigated, revealing an increase in the Curie temperature and switching of AHC and ANC under electric field. This finding may have important implications for energy conversion and spintronic devices.