期刊
出版社
IEEE
DOI: 10.1109/IWMTS54901.2022.9832445
关键词
On wafer measurements; Thin-film resistor; THz; InGaAs; multiline TRL
类别
-
资金
- Deutsche Forschungsgemeinschaft within the Collaborative Research Center [SFB/TRR 196 MARIE]
- European Union [765426]
- State of North-Rhine Westphalia within the EFRE 2014-2020 framework Investment in Growth and Employment under the project Terahertz-Integrationszentrum (THzIZ) [EFRE-0400215]
- BMBF ForLab SmartBeam [Fkz. 16ES0936]
This study presents the design, fabrication, and characterization of a monolithically integrated epitaxial thin-film resistor for THz applications. The resistor shows a flat frequency response and exhibits stability at high temperatures.
We report on the design, fabrication, and characterization of a monolithically integrated epitaxial thin-film resistor for THz applications. The device is made of an n(+) -InGaAs layer grown lattice-matched on an insulating InP:Fe substrate. In this study, on-wafer vector scattering parameter characterization up to 500 GHz is carried out, the calibration is performed by means of the multiline TRL method. The InGaAs thin-film resistor shows very flat frequency response in the range from 100 GHz to 500 GHz. An experiment designed to investigate the resistor's temperature dependence and stability up to 120 degrees C has also been carried out.
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