Ultrahigh responsive negative photoconductivity photodetector based on multilayer graphene/InSe van der Waals heterostructure

Negative photoconductivity (NPC) exhibits great potential in the field of photodetection due to low power consumption and high response. Herein, the photodetectors based on InSe and multilayer graphene (MLG)/InSe van der Waals heterostructure are fabricated. The InSe photodetector shows positive photoconductivity (PPC) behavior, while the MLG/InSe photodetector exhibits NPC behavior. The ultra-high responsivity (1.88 x 10(5) A/W) is achieved for the NPC MLG/InSe photodetector, which is five orders of magnitude higher than that of the sole InSe photodetector based on PPC (6.97 A/W). The MLG/InSe photodetector also shows a high external quantum efficiency (6.41 x 10(7)%) and a fast response time (22 ms). The proposed high-performance MLG/InSe heterostructure photodetector based on NPC for low -dimensional materials may extend applications in future optoelectronic devices.(c) 2022 Vietnam National University, Hanoi. Published by Elsevier B.V.

Automated summary

In this study, photodetectors based on InSe and MLG/InSe van der Waals heterostructure were fabricated. It was found that the MLG/InSe photodetector exhibited negative photoconductivity behavior, achieving ultra-high responsivity, external quantum efficiency, and fast response time. The proposed MLG/InSe heterostructure photodetector based on NPC may have broad applications in future optoelectronic devices.