4.6 Review

Recent advances in TMD interfaces with seamless contacts

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Article Chemistry, Multidisciplinary

Monolayer WS2 Lateral Homosuperlattices with Two-dimensional Periodic Localized Photoluminescence

Wanli Yang et al.

Summary: This study demonstrates the formation of a lateral homosuperlattice (MLHS) with alternating 1T and 2H domains in a 2D WS2 monolayer plane. The 2H domains, laterally localized and isolated by potential wells, exhibit junction interfaces and irradiated photoluminescence (PL) with a lateral periodic distribution in the two-dimensional plane. The research on MLHSs provides insight into lateral homojunctions and homosuperlattices in a monolayer plane, offering an alternative approach to modulate optical and electronic behaviors in TMD monolayers.

ACS NANO (2022)

Article Chemistry, Multidisciplinary

High-Performance, Polarization-Sensitive, Long-Wave Infrared Photodetection via Photothermoelectric Effect with Asymmetric van der Waals Contacts

Mingjin Dai et al.

Summary: PTE detectors offer the potential for ultra-broadband photodetection at room temperature without an external power supply, but their performance in the LWIR regime still requires improvement in terms of speed, responsivity, and noise level. A high-performance PTE photodetector based on low-symmetry palladium selenide (PdSe2) with asymmetric van der Waals contacts demonstrates excellent responsivity and response time, showing sensitivity to linear polarization angles.

ACS NANO (2022)

Article Materials Science, Multidisciplinary

One-step synthesized PbSe nanocrystal inks decorated 2D MoS2 heterostructure for high stability photodetectors with photoresponse extending to near-infrared region

Mingfa Peng et al.

Summary: Two-dimensional layered transition metal dichalcogenides (TMDs) have been widely used in electronics and optoelectronic devices, but their low light absorption ability and narrow spectra range limit their potential in high-performance optoelectronics. In this study, a high-performance PbSe/2D MoS2 heterostructure photodetector was successfully developed by integrating air-stable semiconductor PbSe nanocrystal ink with 2D MoS2. The PbSe/MoS2 photodetector showed improved responsivity, detectivity, and stability compared to pristine 2D MoS2 photodetectors, and maintained high performance in the near-infrared light region.

JOURNAL OF MATERIALS CHEMISTRY C (2022)

Article Materials Science, Multidisciplinary

Emergence of high superconductivity in a layered TaS3 crystal

Xiaojun Wang et al.

Summary: In this study, the phase diagram, stability, and superconducting properties of Ta-S systems under compression were systematically investigated using first-principles methods. A novel superconducting TaS3 structure with a high critical temperature was discovered, as well as other stable superconducting compounds. The superconductivity in these materials can be attributed to the pressure-induced softened phonon modes. These findings provide important insights into the pressure-driven behaviors in TMCs and related materials.

JOURNAL OF MATERIALS CHEMISTRY C (2022)

Article Nanoscience & Nanotechnology

Strong In-Plane Optical and Electrical Anisotropies of Multilayered γ-InSe for High-Responsivity Polarization-Sensitive Photodetectors

Yuan Pan et al.

Summary: This study identifies promising new two-dimensional material γ-InSe with low-symmetry structures for developing monolithic polarization-sensitive photodetectors. A superior responsivity polarization-sensitive photodetector based on multilayer γ-InSe is constructed, showing high efficiency of light absorption, excellent carrier mobility, and exceptional responsivity under polarized light. These findings provide insights into in-plane anisotropic properties of 2D materials and propose a stable and environmentally friendly candidate for anisotropic optoelectronic applications.

ACS APPLIED MATERIALS & INTERFACES (2022)

Article Physics, Applied

Phase-controlled epitaxial growth of MoTe2: Approaching high-quality 2D materials for electronic devices with low contact resistance

Li Tao et al.

Summary: 2D MoTe2 material shows excellent performance in phase-controlled epitaxial growth and phase transition, with the ability to fabricate large-scale semiconducting MoTe2 single crystals and achieve ideal contact geometry.

JOURNAL OF APPLIED PHYSICS (2022)

Article Materials Science, Multidisciplinary

Broadband Visible-Near Infrared Two-Dimensional WSe2/In2Se3 Photodetector for Underwater Optical Communications

Jihua Zou et al.

Summary: A facile van der Waals (vdWs) structured p-n heterojunction has been demonstrated by simply transferring 2D materials, showing broadband spectral response and diode-like behavior. The photodetector based on this heterojunction exhibits high performance and low power consumption in an underwater optical communication system.

ADVANCED OPTICAL MATERIALS (2022)

Article Nanoscience & Nanotechnology

Lateral PIN (p-MoTe2/Intrinsic-MoTe2/n-MoTe2) Homojunction Photodiodes

Sikandar Aftab et al.

Summary: This study demonstrates the possibility of constructing high-performance high-speed electronic devices using a single two-dimensional semiconductor through carrier type band modulation. By sandwiching two different polarities of two-dimensional semiconductors between an intrinsic FET, a p-i-n homojunction diode is successfully fabricated, showing ideal rectifying behavior and excellent photodetection performance.

ACS APPLIED NANO MATERIALS (2022)

Article Materials Science, Multidisciplinary

Enhanced vertical polarization and ultra-low polarization switching barriers of two-dimensional SnS/SnSSe ferroelectric heterostructures

Yun-Qin Li et al.

Summary: A new stable SnS/SnSSe heterostructure with enhanced ferroelectricity is reported, demonstrating the ability of polarization switching through heterostructure inversion and sliding the top SnS monolayer. The heterostructure shows strong vertical polarization and low switching barriers, making it suitable for applications in nanoelectronics.

JOURNAL OF MATERIALS CHEMISTRY C (2022)

Article Materials Science, Multidisciplinary

Versatile van der Waals heterostructures of γ-GeSe with h-BN/graphene/MoS2

Changmeng Huan et al.

Summary: The recent discovery of a novel hexagonal phase of GeSe (gamma-GeSe) with high electrical conductivity in its bulk phase and semiconductor properties in its monolayer has sparked interest in nanoelectronics applications. In this study, the design of van der Waals heterostructures (vdWHs) of gamma-GeSe with graphene, 2D h-BN, and MoS2 as different contact materials is proposed. The results show that gamma-GeSe can form intimate contacts with graphene, leading to a low Schottky barrier, and with MoS2, forming a Z-scheme interface. It is also found that the gamma-GeSe/BN heterostructure can effectively passivate gamma-GeSe and protect its electronic and optical properties.

JOURNAL OF MATERIALS CHEMISTRY C (2022)

Article Chemistry, Multidisciplinary

Self-biased wavelength selective photodetection in an n-IGZO/p-GeSe heterostructure by polarity flipping

Muhammad Hussain et al.

Summary: Transparent semiconductor oxides with two-dimensional heterostructures have been extensively studied for their remarkable photovoltaic characteristics, and this study demonstrates a transparent near-infrared photodetector with high photoresponsivity and fast response time. The device shows wavelength-dependent photovoltaic behavior and the direction of the electric field polarity across the junction can be flipped.

NANOSCALE (2022)

Article Chemistry, Inorganic & Nuclear

Sb-Doped metallic 1T-MoS2 nanosheets embedded in N-doped carbon as high-performance anode materials for half/full sodium/potassium-ion batteries

Yanru Liu et al.

Summary: In this study, stable Sb-doped metallic 1T phase molybdenum sulfide nanosheets were successfully designed and displayed excellent cycling performance and capacity in both sodium-ion batteries and potassium-ion batteries. This research provides new insights for the design of advanced anode materials with T-phase structure.

DALTON TRANSACTIONS (2022)

Article Materials Science, Multidisciplinary

Phase control of sputter-grown large-area MoTe2 films by preferential sublimation of Te: amorphous, 1T′ and 2H phases

Shogo Hatayama et al.

Summary: This study annealed amorphous Mo-Te films to obtain crystalline phase, while eliminating excess Te through sublimation. It also investigated the crystallization mechanism and developed a method for large-area MoTe2 film deposition.

JOURNAL OF MATERIALS CHEMISTRY C (2022)

Article Engineering, Electrical & Electronic

Platinum Disulfide (PtS2) and Silicon Pyramids: Efficient 2D/3D Heterojunction Tunneling and Breakdown Diodes

Sikandar Aftab et al.

Summary: This study presents a technique for preparing PtS2/Si pyramid p-n junctions and investigates their performance. The demonstrated p-n diode shows excellent rectifying performance and exhibits Zener tunneling and avalanche breakdown phenomena. Additionally, the p-n junctions display photovoltaic characteristics and can be used in various optoelectronic devices.

ACS APPLIED ELECTRONIC MATERIALS (2022)

Article Chemistry, Multidisciplinary

Highly Efficient, Ultrabroad PdSe2 Phototransistors from Visible to Terahertz Driven by Mutiphysical Mechanism

Zhuo Dong et al.

Summary: Palladium diselenide (PdSe2) is an ideal material for broad-spectrum photodetection with high responsivity and fast response speed, showing excellent performance in both visible-infrared and terahertz regions.

ACS NANO (2021)

Article Multidisciplinary Sciences

Anomalous collapses of Nares Strait ice arches leads to enhanced export of Arctic sea ice

G. W. K. Moore et al.

Summary: Ice arches at the northern and southern ends of Nares Strait, a key passage in the Arctic, are forming for shorter durations, leading to increased ice transport and accelerating the export of multi-year ice.

NATURE COMMUNICATIONS (2021)

Article Chemistry, Physical

ReSe2/metal interface for hydrogen gas sensing

Sikandar Aftab et al.

Summary: The alignment of Fermi levels between electrodes and 2D materials is crucial for characterizing sensors, and this research demonstrates modulation of the Schottky barrier height can affect the response to hydrogen concentrations, offering a potential solution for developing cost-effective, faster, and room temperature sensors based on 2D materials.

JOURNAL OF COLLOID AND INTERFACE SCIENCE (2021)

Article Chemistry, Multidisciplinary

Fabrication of 1D Te/2D ReS2 Mixed-Dimensional van der Waals p-n Heterojunction for High-Performance Phototransistor

Jia-Jia Tao et al.

Summary: By employing mixed-dimensional heterojunction technology, a high-performance Te/ReS2 photodetector has been successfully fabricated, demonstrating superior sensitivity, fast response speed, and high responsivity and detectivity compared to pristine Te and ReS2 photodetectors.

ACS NANO (2021)

Article Chemistry, Multidisciplinary

Synthesis of Large-Scale Monolayer 1T′-MoTe2 and Its Stabilization via Scalable hBN Encapsulation

Simona Pace et al.

Summary: In this study, large single-crystal monolayer 1T'-MoTe2 was successfully grown via CVD and stabilized in air through a scalable encapsulation approach. The encapsulation with hBN increased the lifetime of monolayer 1T'-MoTe2 from a few minutes to over a month, allowing for transfer, device processing, and thermal cycling without degradation. This scalable heterostack method opens up possibilities for further fundamental studies and technological advancements of monolayer 1T'-MoTe2.

ACS NANO (2021)

Article Nanoscience & Nanotechnology

A reversible and stable doping technique to invert the carrier polarity of MoTe2

Sikandar Aftab et al.

Summary: Through deep ultraviolet doping and exposure to different gas environments, this study successfully demonstrated the polarity inversion of MoTe2 nanoflakes from p-type to n-type, resulting in the formation of an in-plane homogeneous p-n junction with a diode rectifying ratio of approximately 3.8 x 10(4). The use of a physical carrier-type inversion technique may hold significance in advancing functional devices.

NANOTECHNOLOGY (2021)

Article Multidisciplinary Sciences

Near-ideal van der Waals rectifiers based on all-two-dimensional Schottky junctions

Xiankun Zhang et al.

Summary: In this study, a near-ideal rectifier in all-2D Schottky junctions composed of 1T-MoTe2 and monolayer MoS2 was reported, demonstrating an efficient strategy to address Fermi pinning effects and increase Schottky barrier height. By optimizing the van der Waals integration of the two 2D materials and reducing intrinsic defect doping in MoS2, the Schottky barrier width was effectively enlarged by 59%. The rectifier showed a near-unity ideality factor, high rectifying ratio, and exceptional external quantum efficiency, suggesting a promising alternative to enhance the performance of 2D-material-based electronic devices.

NATURE COMMUNICATIONS (2021)

Article Chemistry, Multidisciplinary

Few-Layer MoS2 Photodetector Arrays for Ultrasensitive On-Chip Enzymatic Colorimetric Analysis

Younggeun Park et al.

Summary: Enzymatic colorimetric analysis of metabolites can provide information about energy conversion and biosynthesis related to disease. Miniaturized photodetectors based on TMDCs offer sensitive enzymatic colorimetric detection for point-of-care diagnosis. Constructing TMDC photodetector arrays with consistent performance is crucial for optical signal detection in batched multi-sample assays.

ACS NANO (2021)

Article Multidisciplinary Sciences

Seeded 2D epitaxy of large-area single-crystal films of the van der Waals semiconductor 2H MoTe2

Xiaolong Xu et al.

Summary: The study presents a method for synthesizing wafer-scale single-crystalline 2H MoTe2 semiconductors on an amorphous insulating substrate, with excellent uniformity and 100% device yield. The 2D single-crystalline film can serve as a template for further rapid epitaxy in a vertical manner.

SCIENCE (2021)

Article Chemistry, Multidisciplinary

Controlled Synthesis of MoxW1-xTe2 Atomic Layers with Emergent Quantum States

Ya Deng et al.

Summary: Recent studies have discovered new states of matter in transition metal dichalcogenides (TMDs) with exotic physical behaviors, such as superconductivity and topological quantum states. A facile CVD method was developed to synthesize MoxW1-xTe2 alloy with controllable thickness and chemical composition ratios, showing different transport behaviors like superconductivity and Weyl semimetal states in Mo-rich and W-rich samples. This controllable growth method proves to be an efficient strategy in manipulating electrical properties of TMDCs and provides insights for the design of devices using topological multicomponent TMDC materials.

ACS NANO (2021)

Article Chemistry, Multidisciplinary

Defect Etching of Phase-Transition-Assisted CVD-Grown 2H-MoTe2

Yaoqiang Zhou et al.

Summary: 2D molybdenum ditelluride (MoTe2) with polymorphism is a promising material for high-performance devices, and selectively etching defects with triiodide ion solution can effectively reduce the defect density, improve charge carrier mobility, and increase the effective barrier height at the metal contact.
Article Materials Science, Multidisciplinary

Piezo-Phototronic Effect in 2D α-In2Se3/WSe2 van der Waals Heterostructure for Photodetector with Enhanced Photoresponse

Yuqian Zhao et al.

Summary: The study investigates the influence of piezo-phototronic effect on a flexible 2D material heterostructure, improving the performance and efficiency of the optoelectronic device through the piezo effect, providing new insights for the design of high-performance flexible optoelectronics.

ADVANCED OPTICAL MATERIALS (2021)

Article Crystallography

Enhanced Photoresponsivity of 2H-MoTe2 by Inserting 1T-MoTe2 Interlayer Contact for Photodetector Applications

Der-Yuh Lin et al.

Summary: The study investigated the optical response properties of 2H molybdenum telluride (MoTe2) photodetector structures by inserting 1T-MoTe2 interlayer contacts. Results showed that inserting 1T-MoTe2 can enhance the photoresponsivity of 2H-MoTe2, and explored the frequency dependent photocurrent and time-resolved photoresponse. The potential applicability for photodetection devices based on MoTe2 layered transition metal dichalcogenides semiconductors was also discussed.

CRYSTALS (2021)

Article Chemistry, Physical

Strain Induced Phase Transition of WS2 by Local Dewetting of Au/Mica Film upon Annealing

Tomasz Kosmala et al.

Summary: Phase engineering at the nanoscale of 2D transition metal dichalcogenides flakes, from semiconducting 2H phase to metallic 1T phase, can be achieved by thermal annealing of a TMDC/Au/mica system. Local dewetting of Au particles and resulting tensile strain on TMDC flakes, along with defects induced by thermal annealing, play crucial roles in inducing the phase transition. Scanning photoelectron microscopy (SPEM) proves to be an effective tool in monitoring the described phenomena.

SURFACES (2021)

Article Materials Science, Multidisciplinary

Two-dimensional solid-phase crystallization toward centimeter-scale monocrystalline layered MoTe2via two-step annealing

Chih-Pin Lin et al.

Summary: The study introduces the synthesis of 2D layered materials based on the 2DSPC method, successfully producing high-quality 2H-MoTe2 on a large scale substrate through a two-step annealing process. This demonstrates the potential of the method for synthesizing 2D materials in the future.

JOURNAL OF MATERIALS CHEMISTRY C (2021)

Review Chemistry, Multidisciplinary

Ohmic Contact Engineering for Two-Dimensional Materials

Yue Zheng et al.

Summary: This article summarizes recent progress and developments in contact engineering of 2D materials for the realization of ohmic contacts in 2D electronic devices. The basic physics of contacts for both Si and 2D materials is briefly introduced, followed by various engineering strategies including band matching, doping, phase engineering, insertion of buffer layers, 2D/metal van der Waals contacts, and edge contacts. Opportunities and challenges for optimizing contacts for future 2D electronics are discussed.

CELL REPORTS PHYSICAL SCIENCE (2021)

Review Materials Science, Multidisciplinary

Fermi-level depinning of 2D transition metal dichalcogenide transistors

Ruo-Si Chen et al.

Summary: This review summarizes the recent progress on how to circumvent Fermi-level pinning (FLP) between 2D TMDs semiconductors and metals, including introducing related concepts, discussing factors contributing to FLP, and strategies of Fermi-level depinning. The summary and outlook provides a guideline for suppressing FLP in the process of fabricating high-performance 2D TMD devices.

JOURNAL OF MATERIALS CHEMISTRY C (2021)

Article Materials Science, Multidisciplinary

Activating transition metal dichalcogenide monolayers as efficient electrocatalysts for the oxygen reduction reaction via single atom doping

Shufang Tian et al.

Summary: Recent research has focused on the electrocatalytic applications of 2D transition-metal-dichalcogenides, with particular interest in MoS2. This study reveals the catalytic properties of sulfur-based IVB-BVII TMDs in various phase structures for the oxygen reduction reaction. By doping with transition metals or non-metals, certain TMDs show promise as efficient ORR electrocatalysts, comparable to Pt-based ones. The findings suggest a potential strategy for enhancing the ORR activity of TMDs through single atom doping.

JOURNAL OF MATERIALS CHEMISTRY C (2021)

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Switching photodiodes based on (2D/3D) PdSe2/Si heterojunctions with a broadband spectral response

Sikandar Aftab et al.

Summary: Using mechanical exfoliation technique, we developed high-performance switching photodiodes based on mix-dimensional 2D palladium diselenide and three-dimensional silicon heterojunctions, demonstrating excellent rectifying behavior and self-driven photoresponses.

JOURNAL OF MATERIALS CHEMISTRY C (2021)

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One step towards the 1T/2H-MoS2 mixed phase: a journey from synthesis to application

Sarmistha Das et al.

Summary: This article provides a comprehensive overview of the applications of MoS2 in energy conversion, storage, and pollutant abatement, and discusses the structure, preparation methods, and potential in electrocatalysis of 1T/2H-MoS2.

MATERIALS CHEMISTRY FRONTIERS (2021)

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Single nanoflake-based PtSe2 p-n junction (in-plane) formed by optical excitation of point defects in BN for ultrafast switching photodiodes

Sikandar Aftab et al.

Summary: Novel lateral PtSe2 p-n junctions were fabricated based on PtSe2/BN/graphene van der Waals heterostructures, achieving stable photo doping effect for tuning the polarity of FETs. The diodes displayed excellent rectifying performance and distinctive self-biased photovoltaic behavior, paving the way for developing self-biased photovoltaic devices using 2D noble metal dichalcogenide materials.

JOURNAL OF MATERIALS CHEMISTRY C (2021)

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