Recent advances in TMD interfaces with seamless contacts

Two-dimensional (2D) hetero-phase homojunctions have become increasingly popular in recent years. This is because high-performance field-effect transistors (FETs) require lower contact resistance and clean and atomically flat interfaces for efficient carrier transport. In these junctions, the channel is made of a semiconducting phase (2H), and the electrodes are in contact with semi-metallic (1T ') or metallic (1T) phases. This review describes the tunneling process in detail and demonstrates the creation of high-performance hetero-phase homojunctions. These techniques can assist in the development of novel electrical and optoelectronic devices. This overview of current nanomaterials research, we believe, will aid in the development of reliable and efficient metal-interlayer-semiconductor contacts for nanoelectronic and nanophotonics applications.

Automated summary

This review discusses the latest research progress in two-dimensional hetero-phase homojunctions, focusing on the tunneling process and the creation of high-performance hetero-phase homojunctions. The results of these studies are of great significance for the development of reliable and efficient nanoelectronic and nanophotonics devices.