期刊
2D MATERIALS
卷 3, 期 3, 页码 -出版社
IOP Publishing Ltd
DOI: 10.1088/2053-1583/3/3/031012
关键词
spin-orbit coupling; Rashba spin-orbit coupling; weak antilocalization; spin relaxation; proximity coupling
资金
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [1341822] Funding Source: National Science Foundation
We demonstrate clear weak anti-localization (WAL) effect arising from induced Rashba spin-orbit coupling (SOC) in WS2-covered single-layer and bilayer graphene devices. Contrary to the uncovered region of a shared single-layer graphene flake, WAL in WS2-covered graphene occurs over a wide range of carrier densities on both electron and hole sides. At high carrier densities, we estimate the Rashba SOC relaxation rate to be similar to 0.2 ps(-1) and show that it can be tuned by transverse electric fields. In addition to the Rashba SOC, we also predict the existence of a 'valley-Zeeman' SOC from first-principles calculations. The interplay between these two SOC's can open a non-topological but interesting gap in graphene; in particular, zigzag boundaries host four sub-gap edge states protected by time-reversal and crystalline symmetries. The graphene/WS2 system provides a possible platform for these novel edge states.
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