期刊
2D MATERIALS
卷 3, 期 3, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/2053-1583/3/3/031013
关键词
tungsten disulfide; 2D heterostacks; CVD; graphene; light-matter interface
By exhibiting a measurable bandgap and exotic valley physics, atomically thick tungsten disulfide (WS2) offers exciting prospects for optoelectronic applications. The synthesis of continuous WS2 films on other two-dimensional (2D) materials would greatly facilitate the implementation of novel all-2D photoactive devices. In this work we demonstrate the scalable growth of WS2 on graphene and hexagonal boron nitride (h-BN) via a chemical vapor deposition approach. Spectroscopic and microscopic analysis reveal that the film is bilayer-thick, with local monolayer inclusions. Photoluminescence measurements show a remarkable conservation of polarization at room temperature peaking 74% for the entire WS2 film. Furthermore, we present a scalable bottom-up approach for the design of photoconductive and photoemitting patterns.
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