相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。Fast universal quantum gate above the fault-tolerance threshold in silicon
Akito Noiri et al.
NATURE (2022)
Quantum logic with spin qubits crossing the surface code threshold
Xiao Xue et al.
NATURE (2022)
Precision tomography of a three-qubit donor quantum processor in silicon
Mateusz T. Madzik et al.
NATURE (2022)
Two-qubit silicon quantum processor with operation fidelity exceeding 99%
Adam R. Mills et al.
SCIENCE ADVANCES (2022)
Fast spin-valley-based quantum gates in Si with micromagnets
Peihao Huang et al.
NPJ QUANTUM INFORMATION (2021)
Controlling Synthetic Spin-Orbit Coupling in a Silicon Quantum Dot with Magnetic Field
Xin Zhang et al.
PHYSICAL REVIEW APPLIED (2021)
Relaxation of single-electron spin qubits in silicon in the presence of interface steps
Amin Hosseinkhani et al.
PHYSICAL REVIEW B (2021)
Large, Tunable Valley Splitting and Single-Spin Relaxation Mechanisms in a Si/SixGe1-x Quantum Dot
Arne Hollmann et al.
PHYSICAL REVIEW APPLIED (2020)
Exploiting a Single-Crystal Environment to Minimize the Charge Noise on Qubits in Silicon
Ludwik Kranz et al.
ADVANCED MATERIALS (2020)
Giant Anisotropy of Spin Relaxation and Spin-Valley Mixing in a Silicon Quantum Dot
Xin Zhang et al.
PHYSICAL REVIEW LETTERS (2020)
Electromagnetic control of valley splitting in ideal and disordered Si quantum dots
Amin Hosseinkhani et al.
PHYSICAL REVIEW RESEARCH (2020)
Single-Spin Relaxation in a Synthetic Spin-Orbit Field
F. Borjans et al.
PHYSICAL REVIEW APPLIED (2019)
Effects of interface steps on the valley-orbit coupling in a Si/SiGe quantum dot
Bilal Tariq et al.
PHYSICAL REVIEW B (2019)
A quantum-dot spin qubit with coherence limited by charge noise and fidelity higher than 99.9%
Jun Yoneda et al.
NATURE NANOTECHNOLOGY (2018)
A silicon metal-oxide-semiconductor electron spin-orbit qubit
Ryan M. Jock et al.
NATURE COMMUNICATIONS (2018)
Valley dependent anisotropic spin splitting in silicon quantum dots
Rifat Ferdous et al.
NPJ QUANTUM INFORMATION (2018)
A coherent spin-photon interface in silicon
X. Mi et al.
NATURE (2018)
Interface-induced spin-orbit interaction in silicon quantum dots and prospects for scalability
Rifat Ferdous et al.
PHYSICAL REVIEW B (2018)
Control of valley dynamics in silicon quantum dots in the presence of an interface step
Peter Boross et al.
PHYSICAL REVIEW B (2016)
Spin relaxation in a Si quantum dot due to spin-valley mixing
Peihao Huang et al.
PHYSICAL REVIEW B (2014)
Silicon quantum electronics
Floris A. Zwanenburg et al.
REVIEWS OF MODERN PHYSICS (2013)
Spin-valley lifetimes in a silicon quantum dot with tunable valley splitting
C. H. Yang et al.
NATURE COMMUNICATIONS (2013)
Spin-orbit splittings in Si/SiGe quantum wells: from ideal Si membranes to realistic heterostructures
M. Prada et al.
NEW JOURNAL OF PHYSICS (2011)
Theory of valley-orbit coupling in a Si/SiGe quantum dot
Mark Friesen et al.
PHYSICAL REVIEW B (2010)
Valley splitting theory of SiGe/Si/SiGe quantum wells
Mark Friesen et al.
PHYSICAL REVIEW B (2007)
Spin and valley-orbit splittings in SiGe/Si heterostructures
MO Nestoklon et al.
PHYSICAL REVIEW B (2006)
Spin splitting in symmetrical SiGe quantum wells
LE Golub et al.
PHYSICAL REVIEW B (2004)
Phonon-induced decay of the electron spin in quantum dots
VN Golovach et al.
PHYSICAL REVIEW LETTERS (2004)
Spin-flip transitions between Zeeman sublevels in semiconductor quantum dots
AV Khaetskii et al.
PHYSICAL REVIEW B (2001)