4.5 Article

Qubit-Based Memcapacitors and Meminductors

期刊

PHYSICAL REVIEW APPLIED
卷 6, 期 1, 页码 -

出版社

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevApplied.6.014006

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资金

  1. NSF [ECCS-1202383]
  2. USC Smart State Center for Experimental Nanoscale Physics
  3. RIKEN iTHES Project
  4. MURI Center for Dynamic Magneto-Optics
  5. John Templeton Foundation
  6. State Fund for Fundamental Research of Ukraine
  7. Russian Science Foundation [15-13-20021]
  8. Russian Science Foundation [15-13-20021] Funding Source: Russian Science Foundation
  9. Directorate For Engineering
  10. Div Of Electrical, Commun & Cyber Sys [1202383] Funding Source: National Science Foundation
  11. Grants-in-Aid for Scientific Research [15H02118] Funding Source: KAKEN

向作者/读者索取更多资源

It is shown that superconducting charge and flux quantum bits (qubits) can be classified as memory capacitive and inductive systems, respectively. We demonstrate that such memcapacitive and meminductive devices offer remarkable and rich response functionalities. In particular, when subjected to periodic input, qubit-based memcapacitors and meminductors exhibit unusual hysteresis curves. Our work not only extends the set of known memcapacitive and meminductive systems to qubit-based devices, but also highlights their unique properties potentially useful for future technological applications.

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