Electric-Field-Tunable Ferroelastic Control of Nonvolatile Resistivity and Ferromagnetic Switching in Multiferroic La0.67Ca0.33MnO3/[PbMg1/3Nb2/3O3]0.7[PbTiO3]0.3 Heterostructures

La0.67Ca0.33MnO3 films grown on (111)-oriented 0.7Pb(Mg1/3Nb2/3)O-3-0.3PbTiO(3) substrates is achieved through the ferroelastic effect. By taking advantage of the 180 degrees ferroelectric and non-180 degrees ferroelastic domain switching, we identify that such changes in order parameters stem from domain-switching-induced strain rather than accumulation or depletion of charge carriers at the interface. Specifically, the strong correlation between the ferroelastic strain and the magnetic field is manifested not only by the strain-tunable magnetoresistance effect but also by the magnetically manipulated strain effect, which is essentially driven by the electronic phase separation. These findings present a potential strategy for elucidating the essential physics of the ferroelastic-strain effect and delivering prototype devices for energy-efficient and nonvolatile information storage.