Nonvolatile Multilevel Memory and Boolean Logic Gates Based on a Single Ni/[Pbd(Mg1/3Nb2/3)O3]0.7[PbTiO3]0.3/Ni Heterostructure

Memtranstor that correlates charge and magnetic flux via nonlinear magnetoelectric effects has a great potential in developing next-generation nonvolatile devices. In addition to multilevel nonvolatile memory, we demonstrate here that nonvolatile logic gates such as NOR and NAND can be implemented in a single memtranstor made of the Ni/PMN-PT/Ni heterostructure. After applying two sequent voltage pulses (X-1, X-2) as the logic inputs on the memtranstor, the output magnetoelectric voltage can be positive high ( logic 1), positive low (logic 0), or negative (logic 0), depending on the levels of X-1 and X-2. The underlying physical mechanism is related to the complete or partial reversal of ferroelectric polarization controlled by inputting selective voltage pulses, which determines the magnitude and sign of the magnetoelectric voltage coefficient. The combined functions of both memory and logic could enable the memtranstor as a promising candidate for future computing systems beyond von Neumann architecture.