Nanostructured 3C-SiC on Si by a network of (111) platelets: a fully textured film generated by intrinsic growth anisotropy

In this paper, we address the unique nature of fully textured, high surface-to-volume 3C-SiC films, as produced by intrinsic growth anisotropy, in turn generated by the high velocity of the stacking fault growth front in two-dimensional (111) platelets. Structural interpretation of high resolution scanning electron microscopy and transmission electron microscopy data is carried out for samples grown in a hot-wall low-pressure chemical vapour deposition reactor with trichlorosilane and ethylene precursors, under suitable deposition conditions. By correlating the morphology and the X-ray diffraction analysis we also point out that twinning along (111) planes is very frequent in such materials, which changes the free-platelet configuration.

Automated summary

This paper addresses the unique nature of fully textured, high surface-to-volume 3C-SiC films, produced by intrinsic growth anisotropy. The structural interpretation of scanning electron microscopy and transmission electron microscopy data is carried out for samples grown under suitable deposition conditions. Twinning along (111) planes is also found to be frequent in such materials.