Proposal for low-power atom trapping on a GaN-on-sapphire chip

Hybrid photon-atom integrated circuits, which include photonic microcavities and trapped single neutral atoms in their evanescent field, have great potential for quantum information processing. In this platform, the atoms provide single-photon nonlinearity and long-lived memory, which are complementary to the excellent passive photonic devices in conventional quantum photonic circuits. In this work, we propose a stable platform for realizing hybrid photon-atom circuits based on an unsuspended photonic chip. By introducing high-order modes in the microring, a feasible evanescent-field trap potential well similar to 0.26 mK could be obtained by only 10-mW-level power in the cavity, compared with the 100-mW-level power required in the scheme based on fundamental modes. Based on our scheme, stable single-atom trapping with relatively low laser power is feasible for future studies on high-fidelity quantum gates, single-photon sources, and many-body quantum physics based on a controllable atom array in a microcavity.

Automated summary

Hybrid photon-atom integrated circuits offer great potential for quantum information processing, combining the single-photon nonlinearity and long-lived memory provided by atoms with the passive photonic devices in traditional quantum photonic circuits. This research proposes a stable platform for realizing hybrid photon-atom circuits based on an unsuspended photonic chip, enabling feasible evanescent-field trapping with relatively low laser power.