Ferroelectric Thin-Film Transistors for Memory and Neuromorphic Device Applications

Recently.. active research has been done on the fabrication and characterization of fenuelectric materials and devices for memory and neuromorphic device applications. Here. recent research activities for fabrication of fenuelectric thin-film transistors (FeTFTs) will be discussed in detail to develop high-density memory devices. In addition, analog memory characteristics can be demonstrated in FeTFTs by controlling the polarization states of ferroelcctric materials for neuromorphic device applications. FeTFTs will have a great potential to be used in memory as well as neuromorphic devices.

Automated summary

Recently, there has been active research on the fabrication and characterization of ferroelectric materials and devices for memory and neuromorphic device applications. This paper discusses the recent research activities on the fabrication of ferroelectric thin-film transistors (FeTFTs) in detail, aiming to develop high-density memory devices. Furthermore, FeTFTs demonstrate analog memory characteristics by controlling the polarization states of ferroelectric materials, making them suitable for neuromorphic device applications.