A Study on Digital Active Gate Driving of DC-DC Converter for Suppressing Switching Surge Voltage

High-speed switching of SiC unipolar power semiconductor devices induces an anomalous switching surge voltage in the switching operation of power conversion systems. An active gate driving can control the voltage/current behaviors of the power semiconductor device. It expects to suppress the switching surge voltage. We have focused on a fully digitalized active gate driver. In this paper, the digital active gate driver is applied to a SiC MOSFET in a boost DC-DC converter to improve its switching operation. The experimental results revealed that the driver successfully suppressed the switching surge voltage of SiC MOSFET in the converter.

Automated summary

This paper focuses on the anomalous switching surge voltage issue in the switching operation of SiC unipolar power semiconductor devices. A fully digitalized active gate driver is applied to a SiC MOSFET in a boost DC-DC converter to suppress the switching surge voltage, and experimental results show successful suppression.