4.7 Article

Effect of Alkaline Earth Metal on AZrOx (A = Mg, Sr, Ba) Memory Application

期刊

GELS
卷 8, 期 1, 页码 -

出版社

MDPI
DOI: 10.3390/gels8010020

关键词

alkaline earth metal; resistive switching; memory; oxygen vacancy; sol-gel

资金

  1. Ministry of Science and Technology of Taiwan [MOST 108-2221-E-006-040-MY3]

向作者/读者索取更多资源

This study investigates the electrical properties of metal-insulator-metal resistive random-access memory devices with different elements selected to stabilize Zr. The results show that selecting Mg as the stabilizing element can improve the performance of the devices by reducing hydrolyzed particles and oxygen vacancy density.
Zr can be stabilized by the element selected, such as Mg-stabilized Zr (MSZ), thus providing MSZ thin films with potentially wide applications and outstanding properties. This work employed the element from alkaline earth metal stabilized Zr to investigate the electrical properties of sol-gel AZrO(x) (A = alkaline earth metal; Mg, Sr, Ba) as dielectric layer in metal-insulator-metal resistive random-access memory devices. In addition, the Hume-Rothery rule was used to calculate the different atomic radii of elements. The results show that the hydrolyzed particles, surface roughness, and density of oxygen vacancy decreased with decreased difference in atomic radius between Zr and alkaline earth metal. The MgZrOx (MZO) thin film has fewer particles, smoother surface, and less density of oxygen vacancy than the SrZrOx (SZO) and BaZrOx (BZO) thin films, leading to the lower high resistance state (HRS) current and higher ON/OFF ratio. Thus, a suitable element selection for the sol-gel AZrO(x) memory devices is helpful for reducing the HRS current and improving the ON/OFF ratio. These results were obtained possibly because Mg has a similar atomic radius as Zr and the MgOx-stabilized ZrOx.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.7
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据