Observation of nonlinear planar Hall effect in magnetic-insulator-topological-insulator heterostructures

Interfacing topological insulators (TIs) with magnetic insulators (MIs) have been widely used to study the interaction between topological surface states and magnetism. Previous transport studies typically interpret the suppression of weak antilocalization or appearance of the anomalous Hall effect as signatures of the magnetic proximity effect (MPE) imposed to TIs. Here, we report the observation of the nonlinear planar Hall effect (NPHE) in Bi2Se3 films grown on MI thulium and yttrium-iron-garnet (TmIG and YIG) substrates, which is an order of magnitude larger than that in Bi2Se3 grown on nonmagnetic gadolinium-gallium-garnet (GGG) substrate. The nonlinear Hall resistance in TmIG/Bi2Se3 depends linearly on the external magnetic field, while that in YIG/Bi2Se3 exhibits an extra hysteresis loop around zero field. The magnitude of the NPHE is found to scale inversely with carrier density. We speculate that the observed NPHE is related to the MPE-induced exchange gap opening and out-of-plane spin textures in the TI surface states, which may be used as an alternative transport signature of the MPE in MI/TI heterostructures.

Automated summary

The observation of nonlinear planar Hall effect (NPHE) in Bi2Se3 films grown on magnetic insulator (MI) substrates is reported. It is found that the magnitude of NPHE is inversely proportional to carrier density, possibly due to the MPE-induced exchange gap opening and out-of-plane spin textures in the topological insulator (TI) surface states.