期刊
JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS
卷 17, 期 4, 页码 663-673出版社
AMER SCIENTIFIC PUBLISHERS
DOI: 10.1166/jno.2022.3220
关键词
Terahertz Metasurface; Broadband Absorption; Polarization Conversion; Graphene; Vanadium Dioxide
This paper proposes a bi-functional switchable broadband terahertz metasurface ground design based on U-shaped vanadium dioxide and graphene. The design can effectively switch between absorption and reflection modes through the regulation of two parameters, providing additional options for integrated, intelligent, and miniaturized devices.
This paper proposes a bi-functional switchable broadband terahertz metasurface ground on U-shaped vanadium dioxide (VO2) and graphene. The proposed design can effectively switch the current working state through a two-parameter regulation mechanism. Specifically, as we fix graphene's Fermi level at 1 eV, and VO2 is in the form of insulating, the proposed design can be seen as a broadband terahertz absorber. Shifting the Fermi level of graphene can dynamically modulate the amplitude of the broadband absorption spectrum. In other words, by arbitrarily tailoring the Fermi level of graphene, the proposed design can freely switch states, i.e., mode switching from broadband absorption to broadband reflection, in the frequency range of interest. As graphene's Fermi level is equal to 0.01 eV, and the vanadium dioxide in the structure is in the metallic state; the designed metasurface can be seen as a broadband terahertz linear polarization converter. It can convert the incident linearly polarized terahertz wave into its orthogonal polarization. By varying the conductivity of vanadium dioxide in the simulation, the proposed design can freely tune the current operating state over the operating frequency range, similar to ON and OFF. Metasurfaces can work efficiently in different frequency ranges by changing the geometric parameters. Therefore, the designed structure has IP: 203 8 109 20 On Fr 21 Oct 2022 1 52:32 switchable and tunable functions simultaneously, providing additional options for integrated, intelligent, and miniaturized devices.
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