4.6 Article

Quantum pumping through the surface states of a topological insulator

期刊

PHYSICAL REVIEW B
卷 106, 期 16, 页码 -

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AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.106.165127

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资金

  1. Iran National Science Foundation (INSF)
  2. [97007576]

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The study investigates the quantum charge pumping through the surface states of Bi2Te3, showcasing its potential applications in nanoelectronic devices, including memory read-out and field-effect transistors.
We investigate quantum charge pumping through the surface states of a topological insulator (TI), i.e., Bi2Te3. We consider a device with two oscillating potentials for the generation of a dc current in the adiabatic pumping regime. Applying the exchange magnetic field, we show that the device can work as a memory read-out. Also, we show that by applying a static gate voltage the pumping device can work as a field-effect transistor. In addition, the pumped current obtained in our proposed device is significantly (more than three orders of magnitude) greater than the pumped current obtained previously for TI-based devices. These properties show that Bi2Te3 can be considered a good candidate for the fabrication of nanoelectronic devices based on TI as well as low-power and low-energy consumption devices in quantum computing.

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