期刊
PHYSICAL REVIEW B
卷 106, 期 13, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.106.134425
关键词
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资金
- National Natural Science Foundation of China [12174364, 12104003, 11974079, 11734006, 12274083, 12221004, 12204295, 12204296]
- Shanghai Municipal Science and Technology Major Project [2019SHZDZX01]
- Shanghai Municipal Science and Technology Basic Research Project [22JC1400200]
- DOE Office of Science User Facility [DE-AC02-05CH11231]
- Natural Science Foundation of Shaanxi Provincial Department of Education [22JK0310, 22JK0321]
- Natural Science Basic Research Program of Shaanxi [2022JQ-017]
- Shaanxi University of Technology [SLGRCQD2125, SLGRCQD2215]
- Open Research Project of State Key Laboratory of Surface Physics from Fudan University [KF2022_17]
- excellence program of Hefei Science Center CAS [2021HSC-UE003]
- Natural Science Foundation of Anhui Province [2108085QA20]
- Fundamental Research Funds for the Central Universities [wk2310000104]
- US NSF [DMR-2005108]
- U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division [DE-AC02-05CH11231]
The spin Hall magnetoresistance (SMR) effect in single-crystalline Pt/CoO(001) bilayers has been systematically investigated. X-ray magnetic linear dichroism measurements prove that CoO antiferromagnetic (AFM) spins can be switched into the direction orthogonal to the applied field. We find that the SMR signal is composed of two components related to either the switching of CoO AFM Neel order or the applied strong field effect. Both SMR components show a positive angular dependence. The observed positive SMR is mainly attributed to the uncompensated spins at the Pt/CoO interface.
The spin Hall magnetoresistance (SMR) effect in single-crystalline Pt/CoO(001) bilayers has been system-atically investigated. X-ray magnetic linear dichroism measurements prove that CoO antiferromagnetic (AFM) spins can be switched into the direction orthogonal to the applied field. We find the SMR signal is comprised of two components related to either the switching of CoO AFM Neel order or the applied strong field effect. Both SMR components show a positive angular dependence with R11 > R1, while R11 (R1) is defined as the resistance with the applied in-plane field parallel (perpendicular) to the current. The observed positive SMR is mainly attributed to the uncompensated spins at the Pt/CoO interface, instead of the CoO AFM spins. Our study may attract a great deal of interest to understand the complicated SMR effect in AFM spintronics materials.
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