4.6 Article

Measurement-induced entanglement transition in a two-dimensional shallow circuit

期刊

PHYSICAL REVIEW B
卷 106, 期 14, 页码 -

出版社

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.106.144311

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资金

  1. NTT Research Award [AGMT DTD 9.24.20]
  2. Massachusetts Institute of Technology

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This study examines the entanglement structure of two-dimensional states generated by shallow circuits, observing entanglement phase transitions and generalizing the findings to other qudit systems. In another model, entanglement transitions are observed by varying the density of two-qubit gates in each layer.
We prepare two-dimensional states generated by shallow circuits composed of (1) one layer of the two-qubit controlled-Z (CZ) gate or (2) a few layers of the two-qubit random Clifford gate. After measuring all of the bulk qubits, we study the entanglement structure of the remaining qubits on the one-dimensional boundary. In the first model, we observe that the competition between the bulk X and Z measurements can lead to an entanglement phase transition between an entangled volume law phase and a disentangled area law phase. We numerically evaluate the critical exponents and generalize this idea to other qudit systems with a local Hilbert space dimension larger than 2. In the second model, we observe the entanglement transition by varying the density of the two-qubit gate in each layer. We give an interpretation of this transition in terms of the random bond Ising model in a similar shallow circuit composed of random Haar gates.

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