4.6 Article

Broadband Photosensitive Medium Based on Amorphous Equichalcogenides

期刊

ACS APPLIED ELECTRONIC MATERIALS
卷 4, 期 11, 页码 5397-5405

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acsaelm.2c01075

关键词

chalcogenide glass; photocurrent; light sensitivity; wavelength dependence; temperature dependence

资金

  1. National Science Foundation (NSF) [OISE-2106457]
  2. Joint School of Nanoscience and Nano-engineering
  3. NSF [ECCS-1542174]
  4. National Nano-technology Coordinated Infrastructure (NNCI)

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This study proposes a photosensitive medium based on amorphous equichalcogenide thin films containing germanium and antimony, showing promising characteristics for applications in all-chalcogenide photonics, sensors, and photovoltaics. The optical properties, temperature, and exposure wavelength dependence of DC electrical conductivity are comparable to halide perovskites, making amorphous equichalcogenides an attractive alternative. The dark resistivity follows exponential decay with temperature, covering a two-order-of-magnitude range over a 70 K temperature interval. Light exposure leads to significant changes in current, with a strong photocurrent response observed across the entire 400-1000 nm range under low power. The photoresponse of the developed material decreases with an increase in temperature and vanishes at temperatures higher than 120 degrees C when using only a few milliwatts of exposure power.
A photosensitive medium based on amorphous equichalcogenide thin films containing germanium and antimony is proposed with characteristics promising for applications in all-chalcogenide photonics, sensors, and photovoltaics. Optical properties, temperature, and exposure wavelength dependence of DC electrical conductivity are shown to be comparable with those for halide perovskites, which potentially makes amorphous equichalcogenides a very attractive alternative. The change in dark resistivity with temperature is found to follow exponential decay, covering 2 orders of magnitude over a 70 K temperature interval. Light exposure leads to several orders of relative changes in a current when compared to its dark value. A strong photocurrent response is observed under low power (milliwatts range) exposure across the entire 400-1000 nm range of the investigated wavelengths. An increase in temperature leads to a decrease in the photoresponse of the developed material, which is found to vanish at temperatures higher than 120 degrees C when only a few milliwatts of exposure power is used.

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