期刊
IEEE TRANSACTIONS ON ANTENNAS AND PROPAGATION
卷 70, 期 10, 页码 9959-9964出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TAP.2022.3161343
关键词
Graphene; Indium tin oxide; Resistance; Impedance; Absorption; Optical polarization; Optical reflection; Frequency-tunable; graphene; hybrid structure; microwave absorber (MA); transparent
资金
- Natural Science Foundation of Zhejiang Province [LY22F010001]
- National Natural Science Foundation of China (NSFC) [61701268, 61775195, 62075196]
This work presents the design, fabrication, and measurement of an optically transparent microwave absorber with tunable absorption frequency based on patterned graphene-indium tin oxide (ITO) hybrid structure. The absorption frequency can be dynamically controlled by regulating the bias voltage, and the absorber exhibits high absorption rates. The engineered absorber also exhibits polarization-insensitive characteristics and has broad prospects in applications.
In this work, the authors report the design, fabrication, and measurement of an optically transparent microwave absorber with tunable absorption frequency based on a patterned graphene-indium tin oxide (ITO) hybrid structure. This transparent tunable absorber consists of periodically patterned graphene sandwich structure (GSS), patterned ITO layer, polyvinyl chloride (PVC) substrate, and ITO ground plane from top to bottom. The frequency of absorption peak can be dynamically controlled from 13.1 to 10.9 GHz by regulating the bias voltage between the graphene sheets from 0 to 30 V, in which the peak absorption rates remain above 99.7%. An inhomogeneous doping model for graphene patterns is introduced to interpret the usage of relatively large tuning voltage. The engineered absorber also exhibits polarization-insensitive characteristics attributed to the symmetrical design of the hybrid structure. This tunable device with optical transparency achieved by integrating different transparent materials has broad prospects in the application of multispectral and smart stealth technology.
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