MoS2-on-GaN Plasmonic Photodetector Using a Bowtie Striped Antenna Structure

The layered semiconductor material molybdenum disulfide (MoS2) has led to an upsurge in research for applications in optoelectric devices that benefit from its excellent optical and electrical properties. The application of the plasmonic structure to enhance light-matter interaction and intensity of the light field via localized surface plasmon resonance provides a promising method for MoS2-based devices for improving performance. In this work, we have prepared a plasmonenhanced few-layer MoS2 photodetector based on a gallium nitride substrate using a bowtie equal grid antenna structure, and the large-scale few-layer MoS2 growth on the GaN substrate is realized by chemical vapor deposition. The enhancement MoS2 plasmonic photodetector achieves a high responsivity R of 0.82 A/W, a low noise equivalent power NEP of 6.58 x 10-14 W/Hz1/2, and a detectivity of 1.56 x 1012 Jones under 365 nm at 5 V bias and a corresponding rise/fall time of 18/10 ms. With the enhanced performance of the photodetector demonstrated, the as-fabricated plasmonic structure proposed a feasibility method to achieve enhanced photoresponse and is applicable to other high-efficiency photoelectric devices.

Automated summary

The use of plasmonic structure enhances the performance of MoS2-based devices, and in this study, a plasmonic-enhanced few-layer MoS2 photodetector was successfully prepared on a GaN substrate, demonstrating high responsivity and low noise.