4.6 Article

Large Gap Topological Insulating Phase and Anisotropic Rashba and Chiral Spin Textures in Monolayer Zintl A2MX2

期刊

ACS APPLIED ELECTRONIC MATERIALS
卷 4, 期 11, 页码 5308-5316

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acsaelm.2c00984

关键词

quantum spin Hall effect; topological insulators; electronic structures; first-principles calculations; A2MX2 Zintl compounds

资金

  1. National Center for Theoretical Sciences
  2. Ministry of Science and Technology of Taiwan
  3. [MOST-110-2112-M- 110-013-MY3]

向作者/读者索取更多资源

The complex-structured Zintl phase compounds, including the T2 monolayer Sr2CdBi2, exhibit topological insulating phases and Rashba spin splittings.
A family of two-dimensional (2D) materials, particularly the complex-structured Zintl phase compounds, has attracted tremendous research attention because of tunable material properties and exceptional applications. Utilizing first-principles computations under the hybrid functional approach, we performed a systematic study on A2MX2 (A = Ca, Sr, or Yb; M = Zn or Cd; X = P, As, Sb, or Bi). Among the three surface terminations considered, the metal element XM-termination (T2) was found to be the most stable structural phase with the lowest total ground state energies. Thermodynamic stability was further confirmed through phonon dispersion and formation energy calculations. Surprisingly, the T2 monolayer Sr2CdBi2 was found to host the topological insulating phase with a sizable bandgap of 556 meV, as well as a Z2 topological invariance of 1. The corresponding topologically protected edge states link the conduction and valence bands. Moreover, the topological phase is driven by the spin-orbit coupling, which causes the inverted bands at Gamma point close to the Fermi level concerning the Cd -s + Bi2-s and Bi2-px + py orbitals. Moreover, Rashba and chiral spin-splittings were also observed. The computed Rashba strengths along Gamma-M (alpha R Gamma-M) are 1.970, 0.676, and 0.669 eV center dot angstrom, whereas the computed values along Gamma-K (alpha R Gamma-K) are 1.701, 0.731, and 0.646 eV center dot angstrom, for Ca2ZnAs2, Sr2CdBi2, and Yb2ZnAs2, respectively. Our study provides fundamental knowledge to further experimental investigations and synthesis, which may lead to electronic applications of A2MX2 compounds in quantum computing or spintronics.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.6
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据