期刊
IEEE JOURNAL ON EMERGING AND SELECTED TOPICS IN CIRCUITS AND SYSTEMS
卷 6, 期 2, 页码 146-162出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JETCAS.2016.2547718
关键词
Artificial neural networks; content addressable storage; data storage systems; materials processing; nonvolatile memory; phase change materials; phase change memory
We survey progress in the PCM field over the past five years, ranging from large-scale PCM demonstrations to materials improvements for high-temperature retention and faster switching. Both materials and new cell designs that support lower-power switching are discussed, as well as higher reliability for long cycling endurance. Two paths towards higher density are discussed: through 3D integration by the combination of PCM and 3D-capable access devices, and through multiple bits per cell, by understanding and managing resistance drift caused by structural relaxation of the amorphous phase. We also briefly survey work in the nascent field of brain-inspired neuromorphic systems that use PCM to implement non-Von Neumann computing.
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