期刊
JOURNAL OF MATERIALS CHEMISTRY C
卷 10, 期 48, 页码 18174-18181出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/d2tc03395j
关键词
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资金
- National Natural Science Foundation of China [91750205, U1701661, 61935013, 61905147, 62205215]
- Leading Talents Program of Guangdong Province [00201505, 2019JC01Y178]
- Natural Science Foundation of Guangdong Province [2016A030312010, 2020A1515010598, 2019TQ05x750]
- Shenzhen Science and Technology Innovation Commission [JCYJ20180507182035270, KQTD2017033011044403, KQTD20180412181324255]
- Peacock Team [KQTD20180412181324255]
- Pearl River Talent [2019JC01Y178]
A mixed-dimensional van der Waals heterostructure (MvdWH)-based photodetector combining graphene quantum dots (GQDs) with InSe was fabricated, achieving high responsivity and large detectivity. The performance enhancement can be attributed to p-type doping effect and efficient charge transfer.
Two-dimensional (2D) semiconducting materials like InSe have attracted considerable attention in the photoelectric detection field due to their outstanding properties, such as a large tunable bandgap, high carrier mobility, low electron effective mass and high absorption coefficient. In this work, a mixed-dimensional van der Waals heterostructure (MvdWH)-based photodetector combining graphene quantum dots (GQDs) with InSe was fabricated. The GQD/InSe MvdWH photodetector achieved a high responsivity of 27.48 A W-1 and a large detectivity of 1.2 x 10(12) Jones at 635 nm, a sixty-fold increase compared to the pure InSe devices. The significant enhancement in photoresponsive performances can be attributed to the p-type doping effect and efficient charge transfer from GQDs to InSe. The novel 0D/2D van der Waals heterojunctions offer tremendous opportunities in high-performance photodetectors.
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