4.6 Article

Robust Fe divalent state in one-unit-cell FeSe/SrTiO3 thin films

期刊

PHYSICAL REVIEW B
卷 106, 期 24, 页码 -

出版社

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.106.245112

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资金

  1. National Natural Science Foundation of China [U2032156, 12004071, 12074248]
  2. Natural Science Foundation of Jiangsu Province, China [BK20200348]
  3. Ministry of Science and Technology of China [2022YFA1405700]
  4. National Science Foundation [DMR-2105081]
  5. U.S. Department of Energy Office of Science User Facility [DE-AC02-05CH11231]

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This study investigates the electronic structures and orbital occupancies of FeSe/STO thin films with different thicknesses. The results show that 1UC FeSe/STO exhibits a more persistent 3d6 electronic configuration compared to thicker films, and the possible mechanism and its impact on high-Tc superconductivity are discussed.
The orbital occupancy, as the origin of Hund's rule coupling, provides critical information in understanding the multiorbital iron-based superconductors. The one-unit-cell (1UC) FeSe thin film on a SrTiO3 substrate with superconductive Tc above 60 K has been reported with unique electronic structures as well as orbital occupancy. In this paper, we present the x-ray absorption spectroscopy and resonant inelastic x-ray scattering (RIXS) study of the FeSe/STO thin films of different thicknesses. Together with the atomic multiplet simulation analysis, the FeSe/STO thin films (from 1UC to 10UC) are shown with the pure 3d6 electronic configuration which is identical to the bulk FeSe. Moreover, 1UC FeSe/STO is found to be distinctively more persistent in hosting the 3d6 configuration other than the thicker films under the oxidization process. The robustness of the 3d6 in 1UC FeSe/STO is discussed as a result of charge transfer from the substrate, as well as a mechanism to maintain the high-Tc superconductivity. Finally, our research calls for a further high-resolution RIXS study of the pristine superconductive 1UC FeSe/STO thin film.

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