Raman study of photoinduced changes in Cd-doped amorphous GeSe2 films

For Cd-doped amorphous GeSe2 films Raman spectra reveal a considerable decrease of the amount of edge-sharing GeSe4 tetrahedra and an increasing number of ethane-like Se3Ge-GeSe3 structural units compared to the undoped films. A Raman peak with a frequency close to that of the CdSe LO phonon observed for the Cd-doped films at increasing laser power density (P-exc >= 100 kW/cm(2)) provides evidence for the photoinduced formation of CdSe nanoparticles in the GeSe2:Cd films due to photoenhanced diffusion. Copyright (C) 2022 Elsevier Ltd. All rights reserved.

Automated summary

This study investigates the structural changes of Cd-doped amorphous GeSe2 films and the photoinduced formation of CdSe nanoparticles. The results show that the amount of edge-sharing GeSe4 tetrahedra decreases while the number of ethane-like Se3Ge-GeSe3 structural units increases in the Cd-doped films, along with the formation of CdSe nanoparticles.