High gain E-band amplification based on the low loss Bi/P co-doped silica fiber

A home-made low loss Bi/P co-doped silica fiber was fabricated using the modified chemical vapor deposition (MCVD) technique combined with the solution doping method, where the background loss at 1550 nm was as low as 17 dB/km. We demonstrated for the first time, to the best of our knowledge, an all-fiber amplifier using the home-made Bi/P co-doped fiber achieving broadband amplification in the E-band. The amplifying performance was evaluated and optimized with different pumping patterns and fiber length. A maximum net gain at 1355 nm close to 20 dB and a minimum noise figure of 4.6 dB were obtained for the first time, to the best of our knowledge, using two 1240 nm laser diodes under bidirectional pumping with the input pump and signal powers of 870 mW and -30 dBm, respectively.

Automated summary

In this study, a home-made low loss Bi/P co-doped silica fiber was fabricated using modified chemical vapor deposition technique combined with solution doping method. For the first time, an all-fiber amplifier using the home-made Bi/P co-doped fiber achieved broadband amplification in the E-band. The amplification performance was evaluated and optimized with different pumping patterns and fiber length, obtaining a maximum net gain close to 20 dB at 1355 nm and a minimum noise figure of 4.6 dB.